25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors

• DOI: 10.1002/adma.201304665
• Publication Date: 2014-02-17T10:11:11Z
• Authors: Wi Hyoung Lee; Hyun Ho Choi; Do Hwan Kim; Kilwon Cho
• Keywords: Organic semiconductor

Recent studies of the bias‐stress‐driven electrical instability organic field‐effect transistors (OFETs) are reviewed. OFETs operated under continuous gate and source/drain biases these bias stresses degrade device performance. The principles underlying this discussed, particularly mechanisms charge trapping. There three main charge‐trapping sites: semiconductor, dielectric, semiconductor‐dielectric interface. phenomena in regions analyzed with special attention to microstructural dependence instability. Finally, possibilities for future research field presented. This critical review aims enhance our insight into bias‐stress‐induced trapping aim minimizing operational