Room‐Temperature Ferroelectricity in Hexagonal TbMnO3 Thin Films
0103 physical sciences
02 engineering and technology
0210 nano-technology
01 natural sciences
DOI:
10.1002/adma.201403301
Publication Date:
2014-10-18T10:58:05Z
AUTHORS (8)
ABSTRACT
Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.
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