Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol‐Gel Metal–Oxide Dielectrics and Semiconductors

• DOI: 10.1002/adma.201404296
• Publication Date: 2015-01-07T17:29:18Z
• Authors: Jeong‐Wan Jo; Jaekyun Kim; Kyung‐Tae Kim; Jin‐Gu Kang; Myung‐Gil Kim; Kwang‐Ho Kim; Hyungduk Ko; Yong‐Hoon Kim; Sung Kyu Park
• Keywords: Ultraviolet Rays; Temperature; Oxides; 02 engineering and technology; Electric Capacitance; 01 natural sciences; 7. Clean energy; 0104 chemical sciences; Solutions; Semiconductors; Metals; Aluminum Oxide; Zirconium; 0210 nano-technology; Gels

Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.