Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

• DOI: 10.1002/adma.201503340
• Publication Date: 2015-09-16T15:47:30Z
• Authors: Xudong Wang; Peng Wang; Jianlu Wang; Weida Hu; Xiaohao Zhou; Nan Guo; Hai Huang; Shuo Sun; Hong Shen; Tie Lin; Minghua Tang; Lei Liao; Anquan Jiang; Jinglan Sun; Xiangjian Meng; Xiaoshuang Chen; Wei Lu; Junhao Chu
• Keywords: Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 01 natural sciences; 7. Clean energy; 0104 chemical sciences

Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trifluoroethylene) ferroelectric layer in place of the oxide layer in a traditional field effect transistor. The dark current of the photodetector is strongly suppressed by ferroelectric polarization. A high detectivity 2.21012 Jones) and photoresponsitivity (2570 A W) detector has been achieved under ZERO gate bias at a wavelength of 635 nm. Most strikingly, the band gap of few-layer MoS2 can be tuned by the ultra-high electrostatic field from the ferroelectric polarization. With this characteristic, photoresponse wavelengths of the photodetector are extended into the near infrared (0.85-1.55m). A ferroelectrics optoelectronics hybrid structure is an effective way to achieve high performance 2D electronic optoelectronic devices.<br/>35pages,4 figures<br/>