All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

• DOI: 10.1002/adma.201503342
• Publication Date: 2015-10-07T15:58:27Z
• Authors: Jianping Shi; Mengxi Liu; Jinxiu Wen; Xibiao Ren; Xiebo Zhou; Qingqing Ji; Donglin Ma; Yu Zhang; Chuanhong Jin; Huanjun Chen; Shaozhi Deng; Ningsheng Xu; Zhongfan Liu; Yanfeng Zhang
• Keywords: Molybdenum disulfide; Characterization

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing direct construction of MoS2/Gr vertical heterostructures on Au foils. weak n-doping effect an intrinsic bandgap are obtained from MoS2/Gr/Au via scanning tunneling microscopy spectroscopy characterization. The exciton binding energy accurately deduced by combining photoluminescence measurements. As a service to our authors readers, this journal provides supporting information supplied authors. Such materials peer reviewed may be re-organized for online delivery, but not copy-edited or typeset. Technical support issues arising (other than missing files) should addressed Please note: publisher responsible content functionality any Any queries content) directed corresponding author article.