High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates

• DOI: 10.1002/adma.201504789
• Publication Date: 2016-01-11T23:38:48Z
• Authors: Jong‐Soo Rhyee; Junyeon Kwon; Piyush Dak; Jin Hee Kim; Seung Min Kim; Jozeph Park; Young Ki Hong; Won Geun Song; Inturu Omkaram; Muhammad A. Alam; Sunkook Kim
• Keywords: Electron Mobility

Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) large grains reaching several hundred micrometers. Multilayer transistors high mobility up to 121 cm2 V−1 s−1 excellent mechanical stability. These results suggest that materials will be indispensable for various future applications such as high-resolution displays human-centric soft electronics. As service our authors readers, this journal provides supporting information supplied by the authors. Such are peer reviewed may re-organized online delivery, but not copy-edited or typeset. Technical support issues arising from (other than missing files) should addressed Please note: The publisher is responsible content functionality of any Any queries content) directed corresponding author article.