An Organic Vertical Field‐Effect Transistor with Underside‐Doped Graphene Electrodes

• DOI: 10.1002/adma.201505378
• Publication Date: 2016-04-13T09:01:32Z
• Authors: Jong Su Kim; Beom Joon Kim; Young Jin Choi; Moo Hyung Lee; Moon Sung Kang; Jeong Ho Cho
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

High-performance vertical field-effect transistors are developed, which based on graphene electrodes doped using the underside doping method. The method enables effective tuning of work function while maintaining surface properties pristine graphene. As a service to our authors and readers, this journal provides supporting information supplied by authors. Such materials peer reviewed may be re-organized for online delivery, but not copy-edited or typeset. Technical support issues arising from (other than missing files) should addressed Please note: publisher is responsible content functionality any Any queries content) directed corresponding author article.