Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

• DOI: 10.1002/adma.201601104
• Publication Date: 2016-09-20T11:26:41Z
• Authors: Jian Gao; Young Duck Kim; Liangbo Liang; Juan Carlos Idrobo; Phil Chow; Jiawei Tan; Baichang Li; Lu Li; Bobby G. Sumpter; Toh‐Ming Lu; Vincent Meunier; James Hone; Nikhil Koratkar
• Keywords: 02 engineering and technology; 0210 nano-technology

Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.