Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

02 engineering and technology 0210 nano-technology
DOI: 10.1002/adma.201601104 Publication Date: 2016-09-20T11:26:41Z
ABSTRACT
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.
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