Electrolyte‐Gated Organic Field‐Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

• DOI: 10.1002/adma.201602479
• Publication Date: 2016-10-13T11:30:19Z
• Authors: Francesca Leonardi; Stefano Casalini; Qiaoming Zhang; Sergi Galindo; Diego Gutiérrez; Marta Mas‐Torrent
• Keywords: Organic Semiconductor Blend; Electrolyte-Gated Organic Field-Effect Transistors; organic field-effect transistors; organic large-area electronics; organic semiconductors; printable electronics; solution shearing; Organic Large-Area Electronics; Printable Electronics; 01 natural sciences; Solution Shearing; 0104 chemical sciences

This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.