Metal–Semiconductor Phase‐Transition in WSe2(1‐x)Te2x Monolayer

• DOI: 10.1002/adma.201603991
• Publication Date: 2016-11-22T10:22:46Z
• Authors: Peng Yu; Junhao Lin; Linfeng Sun; Quang Luan Le; Xuechao Yu; Guanhui Gao; Chuang‐Han Hsu; Di Wu; Tay‐Rong Chang; Qingsheng Zeng; Fucai Liu; Qi Jie Wang; Horng‐Tay Jeng; Hsin Lin; Achim Trampert; Zexiang Shen; Kazu Suenaga; Zheng Liu
• Keywords: Compound semiconductor

A metal-semiconductor phase transition in a ternary metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of the WSe2(1-x) can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops 0 (1Td metal), which opens up an exciting opportunity functional electronic/optoelectronic devices.