Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

• DOI: 10.1002/adma.201604823
• Publication Date: 2017-02-20T12:33:28Z
• Authors: Alexandre Tallaire; Ovidiu Brinza; Vianney Mille; Ludovic William; Jocelyn Achard
• Keywords: Crystal (programming language)

A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate-quality substrate hollowed out large square hole. Dislocations are found to propagate vertically and horizontally from the terminate at top surface or sides of hole, thus leaving central part with strongly reduced dislocation density.