Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes

• DOI: 10.1002/adma.201605719
• Publication Date: 2017-06-21T06:18:38Z
• Authors: Lili Zhang; Dong‐Ming Sun; Peng‐Xiang Hou; Chang Liu; Tianyuan Liu; Jianfeng Wen; Nujiang Tang; Jian Luan; Chao Shi; Jin‐Cheng Li; Hong‐Tao Cong; Hui‐Ming Cheng
• Keywords: 02 engineering and technology; 0210 nano-technology

A major obstacle for the use of single‐wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT‐based devices. Here, it is shown that by using silicon oxide (SiOx) nanoparticles as a catalyst, metal‐free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiOx catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as‐grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all‐SWCNT thin‐film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices.