Probing a Device's Active Atoms

• DOI: 10.1002/adma.201606578
• Publication Date: 2017-03-14T15:30:37Z
• Authors: Michał Studniarek; Ufuk Halisdemir; Filip Schleicher; Beata Taudul; Etienne Urbain; Samy Boukari; Marie Hervé; Charles‐Henri Lam...; Abbass Hamadeh; Sebastien Petit‐W...; Olivia Zill; Daniel Lacour; Loïc Joly; Fabrice Scheurer; Guy Schmerber; Victor Da Costa; Anant Dixit; Pierre André Guitard; Manuel Acosta; Florian Leduc; Fadi Choueikani; Edwige Otero; Wulf Wulfhekel; François Montaigne; Elmer Nahuel Mont...; Jacek Arabski; Philippe Ohresser; Eric Beaurepaire; Wolfgang Weber; Mébarek Alouani; Michel Hehn; Martin Bowen
• Keywords: Microelectronics; Tunnel magnetoresistance

Materials science and device studies have, when implemented jointly as “operando” studies, better revealed the causal link between properties of device's materials its operation, with applications ranging from gas sensing to information energy technologies. Here, a further step that maximizes this link, paper focuses on electronic those atoms drive operation by using it read out property. It is demonstrated how method can reveal insight into macroscale, industrial‐grade microelectronic atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different species interfaces, measured while these absorb soft X‐rays synchrotron‐grade brilliance. X‐ray absorption found affect magnetotransport photon linear polarization are tuned excite FeO bonds parallel MTJ's interfaces. This explicit spintronic performance bonds, although predicted, challenges conventional wisdom their detrimental impact. The technique opens interdisciplinary possibilities directly probe role shall considerably simplify iterations within research.