Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films

• DOI: 10.1002/adma.201606927
• Publication Date: 2017-04-11T06:23:55Z
• Authors: Lingxiang Hu; Sheng Fu; Youhu Chen; Hongtao Cao; Lingyan Liang; Hongliang Zhang; Junhua Gao; Jingrui Wang; Fei Zhuge
• Keywords: Neuromorphic engineering

For biological synapses, high sensitivity is crucial for transmitting information quickly and accurately. Compared to memristive ones show a much lower electrical stimuli since higher voltages are needed induce synaptic plasticity. Yet, little attention has been paid enhancing the of devices. Here, electrochemical metallization memory cells based on lightly oxidized ZnS films found highly controllable switching with an ultralow SET voltage several millivolts, which likely originates from two-layer structure films, i.e., unoxidized layers, where filament rupture/rejuvenation confined interface region nanometers in thickness due different ion transport rates these two layers. Based such devices, ultrasensitive synapse realized functions both short-term plasticity long-term potentiation emulated by applying millivolts amplitude, whose greatly surpasses that synapses. The dynamic processes memorizing forgetting mimicked through 5 × array. In addition, operating provides another effective solution relatively energy consumption devices besides reducing current pulse width.