Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2

• DOI: 10.1002/adma.201702931
• Publication Date: 2017-09-18T14:55:48Z
• Authors: Hyeokshin Kwon; Kiyoung Lee; Jinseong Heo; Youngtek Oh; Hyangsook Lee; Samudrala Appalak...; Wonhee Ko; Hyo Won Kim; Jin‐Wook Jung; Hwansoo Suh; Hongki Min; Insu Jeon; Euyheon Hwang; Sungwoo Hwang
• Keywords: Contact resistance; Ohmic contact; Electrical contacts; Characterization

Abstract Despite recent efforts for the development of transition‐metal‐dichalcogenide‐based high‐performance thin‐film transistors, device performance has not improved much, mainly because high contact resistance at interface between 2D semiconductor and metal electrode. Edge been proposed fabrication a high‐quality electrical contact; however, complete electronic properties have elucidated in detail. Using scanning tunneling microscopy/spectroscopy transmission electron microscopy techniques, edge contact, as well lateral boundary semiconducting layer metalized interfacial layer, are investigated, their energy band profile across shown. The results demonstrate possible mechanism formation an ohmic homojunctions transition‐metal dichalcogenides semiconductor–metal layers suggest new scheme utilizing low‐resistance contact.