Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors

• DOI: 10.1002/adma.201705934
• Publication Date: 2018-04-03T06:39:22Z
• Authors: Jian Guo; Yuan Liu; Yue Ma; Enbo Zhu; Shannon Lee; Zixuan Lu; Zipeng Zhao; Changhao Xu; Sung‐Joon Lee; Hao Wu; Kirill Kovnir; Yu Huang; Xiangfeng Duan
• Keywords: Phosphorene; Electron Mobility

The family of 2D semiconductors (2DSCs) has grown rapidly since the first isolation graphene. emergence each 2DSC material brings considerable excitement for its unique electrical, optical, and mechanical properties, which are often highly distinct from their 3D counterparts. To date, studies majorly focused on group IV (e.g., graphene, silicene), V phosphorene), or VIB compounds (transition metal dichalcogenides, TMD), have inspired effort in searching novel 2DSCs. Here, electrical characterization IV-V is presented by investigating few-layer GeAs field-effect transistors. With back-gate device geometry, p-type behaviors observed at room temperature. Importantly, hole carrier mobility found to approach 100 cm2 V-1 s-1 with ON-OFF ratio over 105 , comparable well state-of-the-art TMD devices. crystal structure show anisotropic optical electronic properties (anisotropic 4.8). Furthermore, based transistor shows prominent rapid photoresponse 1.6 µm radiation a photoresponsivity 6 A W-1 rise fall time ≈3 ms. This study materials greatly expands family, can enable new opportunities functional electronics optoelectronics