Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)
0103 physical sciences
01 natural sciences
DOI:
10.1002/adma.201770065
Publication Date:
2017-03-08T13:39:30Z
AUTHORS (13)
ABSTRACT
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (0)
CITATIONS (4)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....