Ultrathin CsPbX3 Nanowire Arrays with Strong Emission Anisotropy

• DOI: 10.1002/adma.201801805
• Publication Date: 2018-06-20T06:37:44Z
• Authors: Yan Gao; Liyun Zhao; Qiuyu Shang; Yangguang Zhong; Zhen Liu; Jie Chen; Zhepeng Zhang; Jia Shi; Wenna Du; Yanfeng Zhang; Shulin Chen; Peng Gao; Xinfeng Liu; Xina Wang; Qing Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract1D nanowires of all‐inorganic lead halide perovskites represent a good architecture for the development of polarization‐sensitive optoelectronic devices due to their high absorption efficient, emission yield, and dielectric constants. However, among as‐fabricated perovskite nanowires with the lateral dimensions of hundreds nanometers so far, the optical anisotropy is hindered and rarely explored owing to the invalidating of electrostatic dielectric mismatch in the physical dimensions. Here, well‐aligned CsPbBr3 and CsPbCl3 nanowires with thickness T down to 15 and 7 nm, respectively, are synthesized using a vapor phase van der Waals epitaxial method. Strong emission anisotropy with polarization ratio up to ≈0.78 is demonstrated in the nanowires with T < 40 nm due to the electrostatic dielectric confinement. With the increasing of thickness, the polarization ratio remarkably reduces monotonously to ≈0.17 until T ≈140 nm; and further oscillates in a small amplitude owing to the wave characteristic of light. These findings not only represent a demonstration of perovskite‐based polarization‐sensitive light sources, but also advance fundamental understanding of their polarization properties of perovskite nanowires.