Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

• DOI: 10.1002/adma.201804422
• Publication Date: 2018-11-09T13:27:13Z
• Authors: Sang‐Soo Chee; Dongpyo Seo; Hanggyu Kim; Hanbyeol Jang; Seungmin Lee; Seung Pil Moon; Kyu Hyoung Lee; Sung Wng Kim; Hyunyong Choi; Moon‐Ho Ham
• Keywords: Contact resistance; Electron Mobility; Nanoelectronics; Field effect

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering these materials create high-performance devices while adapting large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS2 devices, which a graphene film synthesized by chemical vapor deposition (CVD) inserted between CVD-grown Ag electrode an interfacial layer. The field-effect transistors with show improved electrical photoelectrical properties, achieving mobility of 35 cm2 V-1 s-1 , on/off current ratio 4 × 108 photoresponsivity 2160 A W-1 compared those conventional Ti/Au contacts. These improvements attributed the low work function tunability Fermi level; n-doping decreases level, thereby reducing Schottky barrier height resistance electrodes. This demonstration interface key step toward practical application atomically thin TMDC-based low-resistance electronics optoelectronics.