Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

• DOI: 10.1002/adma.201806562
• Publication Date: 2019-03-12T18:53:46Z
• Authors: Yan Sun; Zishu Zhou; Zhen Huang; Jiangbin Wu; Liujiang Zhou; Yang Cheng; Jinqiu Liu; Chao Zhu; Maotao Yu; Peng Yu; Wei Zhu; Yue Liu; Jian Zhou; Bowen Liu; Hongguang Xie; Yi Cao; Hai Li; Xinran Wang; Kaihui Liu; Xiaoyong Wang; Jianpu Wang; Lin Wang; Wei Huang
• Keywords: Band Alignment; :Materials [Engineering]; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); 500; FOS: Physical sciences; 2D Materials; 530; 01 natural sciences; Engineering::Materials; 0104 chemical sciences

Abstract To explore new constituents in two‐dimensional (2D) materials and to combine their best van der Waals heterostructures is great demand as being a unique platform discover physical phenomena design novel functionalities interface‐based devices. Herein, PbI 2 crystals thin few layers are synthesized, particularly through facile low‐temperature solution approach with of large size, regular shape, different thicknesses, high yields. As prototypical demonstration band engineering ‐based interfacial semiconductors, assembled several transition metal dichalcogenide monolayers. The photoluminescence MoS enhanced /PbI stacks, while dramatic quenching WS WSe revealed stacks. This attributed the effective heterojunction formation between these monolayers; type I alignment where fast‐transferred charge carriers accumulate emission efficiency, results enhancement, II separated electrons holes suitable for light harvesting, quenching. demonstrate that , monolayers similar electronic structures show completely distinct light–matter interactions when interfacing providing unprecedented capabilities engineer device performance 2D heterostructures.