Negative Transconductance Heterojunction Organic Transistors and their Application to Full‐Swing Ternary Circuits
Transconductance
DOI:
10.1002/adma.201808265
Publication Date:
2019-05-22T17:19:31Z
AUTHORS (5)
ABSTRACT
Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics H-TRs, ternary inverters have recently been demonstrated. However, they shown incomplete inverter characteristics; output voltage (VOUT ) does not fully swing from VDD to GND . A new H-TR device structure consists a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) layer stacked on PTCDI-C13 is presented. Due continuous DNTT source drain, proposed exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ on. As result, it has very high on/off current ratio (≈105 and behavior. It also demonstrated an array 36 these H-TRs 100% yield, uniform ratio, characteristics. Furthermore, full -to-GND VOUT with three distinct states. The hysteresis-free operation due use hydrophobic gate dielectric encapsulating layers. Based this, transient circuit for first time.
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