Defect‐Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters

• DOI: 10.1002/adma.201906646
• Publication Date: 2019-11-19T18:53:12Z
• Authors: Li Gao; Qingliang Liao; Xiankun Zhang; Xiaozhi Liu; Lin Gu; Baishan Liu; Junli Du; Yang Ou; Jiankun Xiao; Zhuo Kang; Zheng Zhang; Yue Zhang
• Keywords: Molybdenum disulfide; Modulation (music); Lattice (music)

Abstract Ultrathin molybdenum disulfide (MoS 2 ) presents ideal properties for building next‐generation atomically thin circuitry. However, it is difficult to construct logic units of MoS monolayer using traditional silicon‐based doping schemes, such as atomic substitution and ion implantation, they cause lattice disruption instability. An accurate feasible electronic structure modulation strategy from defect engineering proposed homogeneous electronics inverters. By utilizing the energy‐matched electron induction solution process, numerous pure lattice‐stable monosulfur vacancies (V monos are introduced modulate via a shallow trapping effect. The resulting effectively reduces concentration improves work function by 100 meV. Under V , an homogenous inverter with voltage gain 4 successfully constructed. A brand‐new practical design route 2D‐based circuit development provided.