Hidden Vacancy Benefit in Monolayer 2D Semiconductors

• DOI: 10.1002/adma.202007051
• Publication Date: 2021-01-15T22:18:54Z
• Authors: Xiankun Zhang; Qingliang Liao; Zhuo Kang; Baishan Liu; Xiaozhi Liu; Yang Ou; Jiankun Xiao; Junli Du; Yihe Liu; Li Gao; Lin Gu; Mengyu Hong; Huihui Yu; Zheng Zhang; Xiangfeng Duan; Yue Zhang
• Keywords: Electron Mobility; Lattice (music)

Abstract Monolayer 2D semiconductors (e.g., MoS 2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in represents a common strategy to improve their electronic properties, has met with success date. Herein, hidden benefit atomic vacancies monolayer push performance limit is reported. By purposely tailoring sulfur (SVs) an optimum density 4.7% , unusual enhancement obtained and record‐high (>115 cm V −1 s achieved, realizing exceptional current (>0.60 mA µm on/off ratio >10 10 enabling logic inverter ultrahigh voltage gain >100. The systematic transport studies reveal that counterintuitive vacancy‐enhanced originates from nearest‐neighbor hopping conduction model, which SV essential maximizing charge probability. Lastly, vacancy into other further generalized; thus, general properties materials defined.