ECRAM Materials, Devices, Circuits and Architectures: A Perspective

• DOI: 10.1002/adma.202204771
• Publication Date: 2022-11-10T12:06:37Z
• Authors: A. Alec Talin; Yiyang Li; Donald A. Robinson; Elliot J. Fuller; Suhas Kumar
• Keywords: Neuromorphic engineering; Memristor

Non-von-Neumann computing using neuromorphic systems based on two-terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential not been realized due to the lack of materials and devices with appropriate attributes. Unlike memristors, which require large write currents drive phase transformations or filament growth, electrochemical random access (ECRAM) decouples "write" "read" operations "gate" electrode tune conductance state through charge-transfer reactions, every electron transferred external circuit in ECRAM corresponds migration ≈1 ion used store analogue information. Like static dopants traditional semiconductors, electrochemically inserted ions modulate conductivity by locally perturbing host's electronic structure; however, does so dynamic reversible manner. The resulting change can span orders magnitude, from gradual increments needed for analog elements, large, abrupt changes dynamically reconfigurable adaptive architectures. In this in-depth perspective, history ECRAM, recent progress spanning organic, inorganic, 2D materials, circuits, architectures, rich portfolio challenging, fundamental questions, how be harnessed realize new paradigm low-power are discussed.