Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices

• DOI: 10.1002/adma.202206122
• Publication Date: 2022-08-12T00:14:26Z
• Authors: Haoyun Wang; Wei Wang; Yongle Zhong; Dongyan Li; Zexin Li; Xiang Xu; Xingyu Song; Yunxin Chen; Pu Huang; Anyi Mei; Hongwei Han; Tianyou Zhai; Xing Zhou
• Keywords: Quantum Efficiency

2D transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high-performance photovoltaic devices. However, the external quantum efficiency (EQE) power conversion (PCE) of most devices face great challenges in exceeding 50% 3%, respectively, due to low photocarrier separation collection. Here, this study demonstrates with defect-free interface recombination-free channel based on WS2 , showing high EQE 92% approaching theoretical limit PCE 5.0%. The performances attributed van der Waals contact without defects Fermi-level pinning, fully depleted recombination, leading intrinsic collection efficiency. Furthermore, that strategy can be extended other TMDs such as MoSe2 WSe2 94%, respectively. This work proposes a universal building nearly ideal provides potential Shockley-Queisser limit.