Chemical Vapor Deposition of Quaternary 2D BiCuSeO p‐Type Semiconductor with Intrinsic Degeneracy

• DOI: 10.1002/adma.202207796
• Publication Date: 2022-10-12T11:36:56Z
• Authors: Jie Li; Yan Zhang; Junrong Zhang; Junwei Chu; Liu Xie; Wenzhi Yu; Xinxin Zhao; Cheng Chen; Zhuo Dong; Luyi Huang; Liu Yang; Qiang Yu; Zeqian Ren; Junyong Wang; Yijun Xu; Kai Zhang

2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary materials by chemical vapor deposition (CVD) still a challenge restriction thermodynamics. Here, CVD quaternary nanosheets realized. As-grown with thickness down ≈6.1 nm (≈7 layers) and domain size ≈277 µm show excellent ambient stability. Intrinsic degeneracy BiCuSeO, capable maintaining even in few layers, comprehensively unveiled. By varying thicknesses temperatures, carrier concentration can be adjusted range 1019 1021 cm-3 , Hall mobility ≈191 cm2 V-1 s-1 (at 2 K). Furthermore, taking advantage prototypical BiCuSeO/MoS2 TFET fabricated. The emergence negative differential resistance trend multifunctional diodes modulating gate voltage temperature reveal practical implementation nanosheets. These results pave way for rational design devices.