In Situ Growth of High‐Quality Single‐Crystal Twisted Bilayer Graphene on Liquid Copper

• DOI: 10.1002/adma.202312125
• Publication Date: 2023-12-05T23:59:25Z
• Authors: Shan Liu; Baizhe He; Wei Yang; Xiahong Zhou; Xudong Xue; Mengya Liu; Yao Zhao; Xinhe Wang; Jia Si; Fuyi Wang; Zhiyong Zhang; Lianmao Peng; Gui Yu
• Keywords: Bilayer graphene; Characterization

Twisted bilayer graphene (TBG) generates significant attention in the fundamental research of 2D materials due to its distinct twist-angle-dependent properties. Exploring efficient production TBG with a wide range twist angles stands as one major frontiers moiré materials. Here, local space-confined chemical vapor deposition growth technique for high-quality single-crystal ranging from 0° 30° on liquid copper substrates is reported. The clean surface, pristine interface, high crystallinity, and thermal stability are verified by using comprehensive characterization techniques including optical microscopy, electron secondary-ion mass spectrometry. proportion reaches 89%. In addition, stacking structure mechanism investigated, revealing that second layer develops beneath first one. A series comparative experiments illustrates excellent fluidity, promotes TBG. Electrical measurements show electronic properties as-grown TBG, achieving room-temperature carrier mobility 26640 cm