Gate‐Tunable Positive and Negative Photoconductance in Near‐Infrared Organic Heterostructures for In‐Sensor Computing

• DOI: 10.1002/adma.202402903
• Publication Date: 2024-05-06T20:39:51Z
• Authors: Yunqi Xu; Xiaolu Xu; Ying Huang; Ye Tian; Miao Cheng; Junyang Deng; Yifan Xie; Yanqin Zhang; Panpan Zhang; Xinhua Wang; Zhongrui Wang; Mengmeng Li; Ling Li; Ming Liu
• Keywords: 0301 basic medicine; 03 medical and health sciences

Abstract The rapid growth of sensor data in the artificial intelligence often causes significant reductions processing speed and power efficiency. Addressing this challenge, in‐sensor computing is introduced as an advanced architecture that simultaneously senses, memorizes, processes images at level. However, rarely reported for organic semiconductors possess inherent flexibility tunable bandgap. Herein, heterostructure exhibits a robust photoresponse to near‐infrared (NIR) light introduced, making it ideal applications. This heterostructure, consisting partially overlapping p‐type n‐type thin films, compatible with conventional photolithography techniques, allowing high integration density up 520 devices cm −2 5 µm channel length. Importantly, by modulating gate voltage, both positive negative photoresponses NIR (1050 nm) are attained, which establishes linear correlation between responsivity voltage consequently enables real‐time matrix multiplication within sensor. As result, facilitates efficient precise computing, including image nondestructive reading classification, achieving recognition accuracy 97.06%. work serves foundation development reconfigurable multifunctional neuromorphic vision systems.