Hydrogen‐Bonding Integrated Low‐Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts

• DOI: 10.1002/adma.202404626
• Publication Date: 2024-06-03T04:53:30Z
• Authors: Dexing Liu; Ziyi Liu; Xinyu Gao; Jiahao Zhu; Zifan Wang; Rui Qiu; Qinqi Ren; Yiming Zhang; Shengdong Zhang; Min Zhang
• Keywords: Contact resistance

Abstract Van der Waals (vdW) integration enables clean contacts for low‐dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between metal and semiconductor. Here, it is demonstrated from theoretical calculations stronger non‐covalent hydrogen‐bonding interactions facilitate electron significantly reduce resistance; thus, promising break limitations of contact. π‐plane in surface‐engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, anomalous temperature‐dependent observed. Low‐dimensional flexible thin‐film transistors integrated by exhibit both excellent flexibility carrier mobility orders magnitude higher than their counterparts with contacts. This strategy demonstrates a scalable solution realizing high‐performance low‐power electronics beyond