Self‐Anchored Van‐Der‐Waals Stacking Growth of Transition‐Metal Dichalcogenide Nanoplates

Nanometre
DOI: 10.1002/adma.202407586 Publication Date: 2024-08-10T04:59:55Z
ABSTRACT
Transition-metal dichalcogenide (TMDs) nanoplates exhibit unique properties different from their monolayer counterparts. Controllable nucleation and growth are prerequisite highly desirable for practical applications. Here, a self-anchored van-der-Waals stacking method is developed, by which the substrate pit induced precursor etching anchors source material, impedes lateral spreading of droplets facilitates in situ high-quality TMD with thickness tens to hundreds nanometers at well-defined locations. As such, an array controlled dimensions produced applied arrayed photodetectors. This study solves problem controllable preparation nanoplates, holding promise applications electronics optoelectronics.
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