Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

• DOI: 10.1002/adma.202410952
• Publication Date: 2024-10-18T06:16:05Z
• Authors: Bowen Li; Pengshan Xie; Baojie Chen; You Meng; Weijun Wang; Mingwei Yang; Boxiang Gao; Quan Quan; Yan Yan; Mingqi Ding; Danfeng Li; Chi Hou Chan; Johnny C. Ho
• Keywords: Night vision; Photocurrent

Abstract Brain‐like intelligence is ushering humanity into an era of the Internet Perceptions (IoP), where vast amounts data generated by numerous sensing nodes pose significant challenges to transmission bandwidth and computing hardware. A recently proposed near‐sensor architecture offers effective solution reduce processing delays energy consumption. However, a pressing need remains for innovative hardware with multifunctional image capabilities. In this work, Mott material (vanadium dioxide)‐based photothermoelectric near‐infrared photodetectors are developed that exhibit electrode‐dependent tunable super‐linear photoresponse (exponent α > 33) ultralow modulation bias. These devices demonstrate opto‐thermo‐electro‐coupled phase transition, resulting in large photocurrent on/off ratio (>10 5 ), high responsivity (≈500 W −1 well detectivity (≈3.9 × 10 12 Jones), all while maintaining rapid response speeds ( τ r = 2 µs d µs) under bias 1 V. This found arise from electron doping effect determined polarity Seebeck coefficient. Furthermore, work showcases intensity‐selective night vision pattern reorganization, even noisy inputs. paves way developing potential applications medical preprocessing, flexible electronics, intelligent edge sensing.