Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

• DOI: 10.1002/admi.201701411
• Publication Date: 2018-01-15T10:12:43Z
• Authors: Max Kneiß; Chang Yang; José Barzola‐Quiquia; Gabriele Benndorf; Holger von Wencks...; Pablo Esquinazi; Michael Lorenz; Marius Grundmann
• Keywords: Weak localization; Carrier scattering

Abstract Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm 2 V −1 s even when heavily textured. To explain this phenomenon, transport properties such are investigated. The temperature‐dependent resistivities textured (111)‐oriented with different carrier concentration fitted using fluctuation‐induced tunneling conductivity (FITC) model series a power law. FITC describes barriers at grain boundaries whereas law considers scattering metallic interior grains. Magnetoresistance measurements performed on reactively DC‐sputtered film low temperatures ( T < 8 K) suggest 2D weak antilocalization effect phase coherence lengths about 50 nm. This is corroborated by typical logarithmic temperature dependence zero‐field conductance. An n‐type inversion layer or defect band interfaces grains as origin system and proposed. leads to conclusive description electrical explains which due suppressed backscattering presence channels.