Growth of Centimeter‐Scale Monolayer and Few‐Layer WSe2 Thin Films on SiO2/Si Substrate via Pulsed Laser Deposition

Pulsed Laser Deposition
DOI: 10.1002/admi.201800524 Publication Date: 2018-06-12T13:37:28Z
ABSTRACT
Abstract To date, the fabrication of highly uniform large‐scale monolayer and few‐layer p‐type WSe 2 throughout entire substrate, especially on SiO /Si substrates is significantly challenging one most important issues. Here, thin films a centimeter‐scale substrate via pulsed laser deposition reported. The number layers thickness, controlled by varying pulses, determined transmission electron microscopy analysis. high uniformity as‐grown film verified Raman peak position intensity, estimated mapping. Using conventional photolithography process, field effect transistors based are fabricated their electrical characteristic analyzed.
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