Impact of the Ink Formulation and Coating Speed on the Polymorphism and Morphology of a Solution‐Sheared Thin Film of a Blended Organic Semiconductor

• DOI: 10.1002/admi.201900950
• Publication Date: 2019-10-01T03:59:58Z
• Authors: Adrián Tamayo; Sergi Riera‐Galindo; Andrew O. F. Jones; Roland Resel; Marta Mas‐Torrent
• Keywords: Organic semiconductor; Polystyrene; Spin Coating

Abstract Despite the recent encouraging advances in achieving high‐performance organic field effect transistors employing meniscus‐guided processing techniques compatible with roll‐to‐roll manufacturing, there is still a very limited knowledge about how all coating parameters influence thin film electrical characteristics. Here, polymorphism and morphology of films semiconductor dibenzo‐tetrathiafulvalene blended polystyrene deposited by bar‐assisted meniscus shearing (BAMS) are investigated in‐depth modifying speed ink formulation. It found that these significantly affect crystallization process resulting Remarkably, pure polymorphs optimized field‐effect mobilities can be achieved only within narrow range conditions. The precise control crystal structure paramount importance order to move toward real applications high device‐to‐device reproducibility.