High SERS Sensitivity Enabled by Synergistically Enhanced Photoinduced Charge Transfer in Amorphous Nonstoichiometric Semiconducting Films

• DOI: 10.1002/admi.201901133
• Publication Date: 2019-08-23T10:37:56Z
• Authors: Xingce Fan; Mingze Li; Qi Hao; Minshen Zhu; Xiangyu Hou; Hao Huang; Libo Ma; Oliver G. Schmidt; Teng Qiu
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Semiconducting surface‐enhanced Raman scattering (SERS) materials have attracted tremendous attention for their good signal uniformity, chemical stability, and biocompatibility. Here, a new concept to design high sensitivity semiconducting SERS substrates through integration of both amorphous nonstoichiometric features WO 3− x thin films is presented. The these two provides narrower bandgap, additional defect levels within the stronger exciton resonance, higher electronic density states near Fermi level. These characteristics lead synergy promote photoinduced charge transfer resonance between analytes substrate by offering efficient routes escaping transferring as well strong vibronic coupling, thus realizing activity on films.