Enhanced Gas Sensing Performance of Organic Field‐Effect Transistors by Modulating the Dimensions of Triethylsilylethynyl‐Anthradithiophene Microcrystal Arrays

• DOI: 10.1002/admi.201901696
• Publication Date: 2020-01-07T11:14:20Z
• Authors: Do Hun Kwak; Yena Seo; John E. Anthony; Seunghyun Kim; Jiyeon Hur; Huijeong Chae; Hui Joon Park; Bong‐Gi Kim; Eunho Lee; Sunglim Ko; Wi Hyoung Lee
• Keywords: Polydimethylsiloxane; Organic field-effect transistor; Electron Mobility; Crystal (programming language)

Abstract This paper systematically compares the gas sensing properties of organic field‐effect transistors (OFETs) based on patterned 5,11‐bis(triethylsilylethynyl)anthradithiophene (TES‐ADT) films, by adopting TES‐ADT crystal arrays various shapes and dimensions. The patterning crystallization spin‐cast layers are achieved use a solvent‐containing engraved polydimethylsiloxane (PDMS) mold. Decreasing width pattern enhances performance, as well mobility OFETs. decreased grain boundary density at narrower line contributes to increase mobility. On other hand, increased performance is mainly due area edges, which provides diffusion pathway for molecules arrive semiconductor‐dielectric interface. study new perspectives in OFET‐based sensor, will be useful design active channel boost