Tuning Transport and Chemical Sensitivity via Niobium Doping of Synthetic MoS2

• DOI: 10.1002/admi.202000856
• Publication Date: 2020-08-05T11:34:24Z
• Authors: Kehao Zhang; Donna D. Deng; Boyang Zheng; Yuanxi Wang; F. Keith Perkins; Natalie C. Briggs; Vincent H. Crespi; Joshua A. Robinson
• Keywords: Ohmic contact

Abstract Beyond the intrinsic properties of 2D materials, another advantage is tunability that follows from their low dimensionality. Here, large‐area Nb‐doped MoS 2 monolayer films deposited by metal organic chemical vapor deposition can function as electrical contacts or sensors are demonstrated. Compared to pristine , exhibits a relatively faster growth rate and quenched PL due formation mid‐gap energy bands. When Nb concentration reaches 5 at%, doped shows clear p‐type characteristics, evident 1.7 eV shift Fermi level toward valence band maximum. Doping also impacts transport at metal/MoS interface, demonstrated Pt–Ir metallization Schottky‐limited when in contact with undoped but Ohmic on Nb‐MoS . Moreover, 50 × improved signal‐to‐noise ratio sensing triethylamine compared < 15 parts‐per‐billion detection limit.