Reconfigurable Logic‐in‐Memory Using Silicon Transistors

• DOI: 10.1002/admt.202101504
• Publication Date: 2022-05-04T07:00:40Z
• Authors: Doohyeok Lim; Kyoungah Cho; Sangsig Kim
• Keywords: Pull-up resistor; Memory cell; Resistor–transistor logic

Abstract In this paper, a novel reconfigurable logic‐in‐memory built using silicon transistors is proposed. The transistor can be reconfigured as p ‐ or n ‐switchable memory by controlling the polarity of gate inputs. These electrical characteristics are enabled utilizing holes electrons majority charge carriers for positive feedback loop. functions NOT and YES gates with same cell comprising load resistor demonstrated. Moreover, it revealed that two‐input cell, based on two resistor, negative‐AND OR gates. This technology facilitate development next‐generation low‐power high‐performance computing.