Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation

• DOI: 10.1002/admt.202302209
• Publication Date: 2024-05-09T08:59:59Z
• Authors: Seungho Ryu; Mingu Kang; Kyoungah Cho; Sangsig Kim
• Keywords: Dram; Dynamic random-access memory

Abstract Capacitorless two‐transistor (2T0C) dynamic random‐access memory (DRAM) cells comprising oxide thin‐film transistors (TFTs) show potential as low‐power and high‐density DRAM cells; however, the multiply–accumulate (MAC) operation using these is not yet realized. In this study, 2T0C amorphous indium–tin–gallium–zinc TFTs are fabricated for MAC operations. a cell, one transistor acts write other read transistor, whose gate capacitance corresponds to data storage capacitance. The have long retention time of 1000 s, which 10 4 times longer than that conventional cells, owing extremely low leakage current (1.11 × −18 A µm −1 ). These satisfy original condition synaptic devices, in proportional relationship exists between input output. performed two cells. This study demonstrates usefulness artificial neural networks.