All‐Inorganic Perovskite Quantum Dots/p‐Si Heterojunction Light‐Emitting Diodes under DC and AC Driving Modes

• DOI: 10.1002/adom.201700897
• Publication Date: 2017-12-05T10:37:13Z
• Authors: Jingjing Liu; Xuexi Sheng; Yangqing Wu; Dongke Li; Jianchun Bao; Yang Ji; Zewen Lin; Xiangxing Xu; Linwei Yu; Jun Xu; Kunji Chen
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Abstract Light‐emitting diodes based on perovskite quantum dots have attracted much attention since they can be applied in low‐cost display, biosensors, and other optoelectronic devices. Here, all‐inorganic light‐emitting n‐type dots/p‐Si heterojunction are fabricated. Both the green red light emission achieved at room temperature. The output power density is 0.14 mW cm −2 for device 0.25 one. relatively low turn voltage high intensity attributed to small hole injection barrier between CsPbI 3 p‐Si. drop off current observed under direct (DC) driving mode, which significantly improved by applying alternating (AC) square pulses. enhanced electroluminescence operation stability AC mode less thermal degradation reduced charge accumulation interface defect states due alternated biases. results demonstrate possibility of integrating with Si platform, will helpful extend their actual applications.