All‐Inorganic Perovskite Quantum Dots/p‐Si Heterojunction Light‐Emitting Diodes under DC and AC Driving Modes
02 engineering and technology
0210 nano-technology
7. Clean energy
DOI:
10.1002/adom.201700897
Publication Date:
2017-12-05T10:37:13Z
AUTHORS (11)
ABSTRACT
Abstract Light‐emitting diodes based on perovskite quantum dots have attracted much attention since they can be applied in low‐cost display, biosensors, and other optoelectronic devices. Here, all‐inorganic light‐emitting n‐type dots/p‐Si heterojunction are fabricated. Both the green red light emission achieved at room temperature. The output power density is 0.14 mW cm −2 for device 0.25 one. relatively low turn voltage high intensity attributed to small hole injection barrier between CsPbI 3 p‐Si. drop off current observed under direct (DC) driving mode, which significantly improved by applying alternating (AC) square pulses. enhanced electroluminescence operation stability AC mode less thermal degradation reduced charge accumulation interface defect states due alternated biases. results demonstrate possibility of integrating with Si platform, will helpful extend their actual applications.
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