Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

• DOI: 10.1002/adom.202000970
• Publication Date: 2020-09-21T09:33:27Z
• Authors: Keshuang Li; Junjie Yang; Ying Lu; Mingchu Tang; Pamela Jurczak; Zizhuo Liu; Xuezhe Yu; Jae‐Seong Park; Huiwen Deng; Hui Jia; Manyu Dang; Ana M. Sanchez; Richard Beanland; Wei Li; Xiaodong Han; Jin‐Chuan Zhang; Huan Wang; Fengqi Liu; Siming Chen; Alwyn Seeds; Peter Smowton; Huiyun Liu
• Keywords: Annihilation

Abstract Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route low‐cost high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between Si, which makes it almost impossible to produce high‐quality Si. In this paper, novel technique achieve IB‐free GaAs monolithically grown by realizing alternating straight meandering single atomic steps surface has been demonstrated without use double steps, was previously believed be key for growth The periodic results high‐temperature annealing buffer layer. Furthermore, an electronically pumped quantum‐dot laser GaAs/Si platform with maximum operating temperature 120 °C. These can major step towards monolithic mature technology.