Self‐Powered Photodetector with High Performance Based on All‐2D NbSe2/MoSe2 van der Waals Heterostructure

• DOI: 10.1002/adom.202300905
• Publication Date: 2023-07-28T14:52:35Z
• Authors: Chunyu Li; Zhiming Wu; Chaoyi Zhang; Silu Peng; Jiayue Han; Meiyu He; Xiang Dong; Jun Gou; Jun Wang; Yadong Jiang
• Keywords: Specific detectivity

Abstract 2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, strong Fermi pinning at contact between bulk metallic electrodes semiconductor greatly hinders wide application such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on all‐2D van der Waals (vdWs) composed 2H‐NbSe 2 semiconducting MoSe . Benefiting from built‐in electric field, device exhibits rectification ratio 2.1 × 10 3 Furthermore, photovoltaic effect can be observed broad spectrum ranging 405 to 980 nm without external voltage, where maximum responsivity 64.92 A W −1 , specific detectivity 2.39 14 Jones, large on–off current >10 5 are obtained 650 nm. Simultaneously, efficient charge separation high‐quality heterointerface NbSe /MoSe results fast response/recovery time 180/80 µs. This work demonstrates promising potential as electrode forming realize high‐performance broadband near‐infrared communication.