An Ultrasensitive ReSe2/WSe2 Heterojunction Photodetector Enabled by Gate Modulation and its Development in Polarization State Identification

• DOI: 10.1002/adom.202301410
• Publication Date: 2023-09-11T02:44:22Z
• Authors: Wanglong Wu; Zhiyuan Liu; Zhicong Qiu; Ziqiao Wu; Zhongming Li; Xiong Yang; Lixiang Han; Chengyuan Li; Nengjie Huo; Xiaozhou Wang; Jiandong Yao; Zhaoqiang Zheng; Jingbo Li
• Keywords: Photocurrent; Photoconductivity; Photodiode

Abstract Ultrasensitive photodetectors with polarization angle recognition have broad applications in both civilian and military domains. The emerging 2D materials in‐plane anisotropy offer promising platforms for realizing these applications, owing to their intriguing properties. However, the lack of an effective photoconductivity gain mechanism low photocurrent anisotropic ratio made it challenging achieve digital output information. Herein, a gate voltage‐dependent phototransistor based on ReSe 2 /WSe out‐of‐plane heterostructure is proposed. Attributed sophisticated band alignment engineering, device exhibits remarkable photoresponse characteristics sensitivity, including outstanding responsivity 2.29 × 10 4 A W −1 , extraordinary detectivity 5.65 13 Jones, prompt rise/decay time 197/182 µs, as well high 10.9. Based features, integrated into system, which accurately identifies incident light displays it. These results demonstrate strong potential future optical communication logic circuits.