Multilayer Graphene/Epitaxial Silicon Near‐Infrared Self‐Quenched Avalanche Photodetectors

• DOI: 10.1002/adom.202400335
• Publication Date: 2024-05-16T07:35:20Z
• Authors: Zongwen Li; Xiaoxue Cao; Zhixiang Zhang; Baoshi Qiao; Feng Tian; Yue Dai; Srikrishna Chanak...; Xinyu Liu; Jian Chai; Dajian Liu; Muhammad Abid Anwar; Xun Han; Fei Xue; Wenzhang Fang; Yaping Dan; Yuda Zhao; Huan Hu; Bin Yu; Chao Gao; Yang Xu
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract 2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, signal‐to‐noise ratio. These hold promise addressing inherent technical challenges associated APDs, such as low light absorption coefficient, elevated noise current, substantial power consumption due to bias resulting only moderate current gain. In this work, a macro‐assembled graphene nanofilm (nMAG)/epitaxial silicon (epi‐Si) vertical heterostructure photodetector responsivity 0.38 A W −1 response time 1.4 µs is reported. The use high‐quality nMAG layer lightly‐doped epi‐Si multiplication region under mode provide (2.51 mA ) detectivity (2.67 × 10 9 Jones) at 1550 nm, which can achieve high‐resolution imaging. addition, APD displays weak level an gain M = 1123. It work relatively turn‐on voltages self‐quenching by switching from illumination dark during multiplication, real‐time data transfer rate 38 Mbps near‐infrared communication links. proposed structure enables fabrication high‐performance APDs infrared range using complementary‐metal‐oxide‐semiconductor (CMOS)‐compatible processes.