Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics

• DOI: 10.1002/adom.202400499
• Publication Date: 2024-05-21T07:35:36Z
• Authors: Huabin Yu; Muhammad Hunain M...; Rui Wang; Shudan Xiao; Dong Li; Yuanmin Luo; Danhao Wang; Zhixiang Gao; Jikai Yao; Chao Shen; Shuiqing Li; Jinjian Zheng; Jiangyong Zhang; Boon S. Ooi; Sheng Liu; Haiding Sun
• Keywords: Ultraviolet; Ultraviolet light

Abstract The progressive downscaling of silicon‐based microelectronic devices delivers compact and advanced integrated circuits for fast data processing computing. Similarly, the miniaturization conventional optoelectronics is also an important frontier technology emerging lighting, imaging, communication, sensing. Herein, this study reports a miniature dual‐functional diode (DF‐diode) with both light‐emitting light‐detecting functionalities. proposed micro‐scale DF‐diode exhibits record high responsivity 300 mA W −1 at 265 nm ultrafast response rise time 3.7 ns in mode. While operating emitting mode, it demonstrates extraordinarily −3 dB optical bandwidth above 585 MHz enhanced external quantum efficiency performance. Significantly, development DF‐diodes has opened up new avenue toward realization effective long‐distance solar‐blind communication system future.