Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing

• DOI: 10.1002/adpr.202300316
• Publication Date: 2024-06-19T15:23:38Z
• Authors: Muhammad Taha Sultan; Ionel Stavarache; Andrei Manolescu; Unnar Bjarni Arnalds; Valentin Serban T...; Halldor Gudfinnur...; Snorri Ingvarsson; Magdalena Lidia C...
• Keywords: Strain (injury)

SiGe‐SiO 2 ‐based structures present high interest for their photosensitivity from visible to short‐wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid thermal (RTA) and rapid‐like furnace (FA), are compared. Both RTA FA performed at 600 °C 1 min SiGe nanocrystals (NCs) formation in SiO matrix Si/SiO /SiGe/SiO deposited by magnetron sputtering. The imitates resulting enhanced spectral response. X‐ray diffraction, transmission electron microscopy, Raman spectroscopy carried out showing Ge‐rich NCs with 11.3 ± 1.2 nm size 9.4 0.8 FA. Photocurrent spectra both show several peaks dependent. photocurrent intensity samples is ≈7 times higher than while cutoff wavelengths slightly different, 1365 1375 RTA. (at −1.5 V) over 4 A W −1 responsivity 730 nm, 6.4 × 10 7 Jones detectivity 735 2.2 about 1210 nm. contain small incorporated residual strain, ones formed of columnar separated SiGeO x amorphous regions increased tensile strain the SiGe.