Performing of Spin‐Dependent Diodes in Co‐Doped SiC Bilayer by Fully Epitaxial Magnetic Tunnel Junctions

• DOI: 10.1002/adts.202401455
• Publication Date: 2025-03-14T03:00:31Z
• Authors: Xingkun Liang; Zhengxin Yan; Juntao Kong; Zehua Zhao; Jinghua Zhao; Yu Wang; Chen Qi; Zhaoqi Wang

AbstractThe switching mechanisms of a spin current diode induced by an alternating electric field are investigated within fully epitaxial magnetic tunnel junctions (TJs) composed of a SiC double layer. This is achieved through precise engineering of the spatial positions of Co atoms, within which the spin‐diode tunneling process, driven by a bias voltage (BV), is carefully explored. This work reveals that incorporating high‐spin Co atoms into the SiC‐Co junction forms a spin‐down domain wall, thereby facilitating spin filtering. Meanwhile, the freedom of spin‐electron transmission governed by the TJ in a spin‐polarized heterojunction is confirmed. These findings demonstrate that the characteristics of the spin‐charge current can be significantly manipulated by adjusting the position of Co atoms in devices and by varying the applied BV, providing valuable insights for the development of spintronic devices.