Control of Interface Defects for Efficient and Stable Quasi‐2D Perovskite Light‐Emitting Diodes Using Nickel Oxide Hole Injection Layer

• DOI: 10.1002/advs.201801350
• Publication Date: 2018-10-06T03:41:49Z
• Authors: Seungjin Lee; Da Bin Kim; Iain Hamilton; Matyas Daboczi; Yun Seok Nam; Bo Ram Lee; Baodan Zhao; Chung Hyeon Jang; Richard H. Friend; Ji‐Seon Kim; Myoung Hoon Song
• Keywords: Non-blocking I/O; Nickel oxide; Charge carrier; Quantum Efficiency; Quantum yield

Abstract Metal halide perovskites (MHPs) have emerged as promising materials for light‐emitting diodes owing to their narrow emission spectrum and wide range of color tunability. However, the low exciton binding energy in MHPs leads a competition between trap‐mediated nonradiative recombination bimolecular radiative recombination. Here, efficient stable green emissive perovskite (PeLEDs) with an external quantum efficiency 14.6% are demonstrated through compositional, dimensional, interfacial modulations MHPs. The energetics optoelectronic properties layer grown on nickel oxide (NiO x ) poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate hole injection interfaces investigated. better interface formed NiO /perovskite layers terms lower density traps/defects, well more balanced charge carriers leading high yield main reasons significantly improved device efficiency, photostability perovskite, operational stability PeLEDs.