Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

• DOI: 10.1002/advs.202005038
• Publication Date: 2021-05-29T15:46:46Z
• Authors: Long Liu; Yi Li; Xiaodi Huang; Jia Chen; Zhe Yang; Kan‐Hao Xue; Ming Xu; Huawei Chen; Peng Zhou; Xiangshui Miao
• Keywords: Memristor

Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most these memristive devices, however, made from semiconducting chalcogenides which fail to gate the off-state current. To this end, crossbar using HfSe2 fabricated, then top layers oxidized into "high-k" dielectric HfSex Oy via oxygen plasma treatment, so that cell resistance can be remarkably increased. This two-terminal Ti/HfSex /HfSe2 /Au exhibits excellent forming-free resistive switching performance with high speed (<50 ns), low operation voltage (<3 V), large window (103 ), good data retention. importantly, current power consumption reach 100 pA 0.1 fJ pJ, much lower than other HfO based memristors. A functionally complete low-power Boolean experimentally demonstrated device, allowing it in application energy-efficient in-memory computing.