High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

• DOI: 10.1002/advs.202207611
• Publication Date: 2023-04-19T03:07:17Z
• Authors: Youngmin Kim; Hyo‐Jun Joo; Melvina Chen; Bongkwon Son; Daniel Burt; Xuncheng Shi; Lin Zhang; Zoran Ikonic; Chuan Seng Tan; Donguk Nam
• Keywords: Laser linewidth; Realization (probability)

Abstract The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key realization scalable optical and quantum photonic circuits. Herein, technique is presented produce on‐chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control in gain medium, emission wavelengths several GeSn one‐dimensional crystal nanobeam are precisely matched whose initial significantly varied. method changes structure region far away from medium inducing Sn segregation controllable manner, enabling wavelength tuning more than 10 nm without degrading properties such as intensity linewidth. authors believe work presents new possibility scale up for large‐scale photonic‐integrated